Properties of ferroelectric PbTiO3 thin films

PbTiO3 thin films were prepared from alkoxide solution precursors and crystallized onto Pt/TiO2/SiO2/Si substrates. Microscopy observations revealed that the complexity of the domain walls structure decreased with the grain size. Dielectric, electrostrictive, and piezoelectric properties of the films were characterized in details. A shift of the temperature of the dielectric permittivity maximum due to stresses in the plane of films has been observed. Electrostrictive M and Q coefficients were estimated by measuring strain as a function of the ac electric field amplitude. The d(33) vs E-dc loops are rectangular with a maximum weak field piezoelectric d(33) coefficient equal to 65 pm/V. The dielectric permittivity and piezoelectric nonlinearities can be explained by taking into account domain-walls contributions. Dielectric and piezoelectric aging was investigated. It was found that both coefficients follow logarithmic time dependence, with comparable rates. The aging behavior in the PT films is thus qualitatively closer to that in ceramics than in thin films of lead zirconate titanate.(C) 2002 American Institute of Physics.

Published in:
Journal of Applied Physics, 91, 3, 1495-1501
Kighelman, Z Swiss Fed Inst Technol, EPFL, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, EPFL, Dept Mat, Ceram Lab, CH-1015 Lausanne, Switzerland 514CF Times Cited:8 Cited References Count:32
Other identifiers:

 Record created 2006-08-21, last modified 2018-03-18

Rate this document:

Rate this document:
(Not yet reviewed)