The properties of Pb1-xCaxTiO3 (x=0-30) thin films for applications in point-detectors and arrays can be further improved ii porous, low-dielectric constant layers are being Used. Both 2-methoxyethanol and 1,3-propanediol based solution precursors were used for spin-coating platinized Si3N4/SiO2/Si wafers. The heating-rate during the final anneal was observed to be the controlling parameter for the evolution of either dense or porous microstructures, Low temperature crystallization of the perovskite phase (T<400 degrees C) during fast heating at 60 degrees C/s and the difference in the microstructural evolution of dense and porous films were studied by Rutherford backscattering spectroscopy, XRD, SEM and TEM, Microstructure-property relationships and electrical properties concerning the domain mobility were examined.