Electrical properties and microstructural evolution of porous Pb1-xCaxTiO3 pyroelectric thin films
The properties of Pb1-xCaxTiO3 (x=0-30) thin films for applications in point-detectors and arrays can be further improved ii porous, low-dielectric constant layers are being Used. Both 2-methoxyethanol and 1,3-propanediol based solution precursors were used for spin-coating platinized Si3N4/SiO2/Si wafers. The heating-rate during the final anneal was observed to be the controlling parameter for the evolution of either dense or porous microstructures, Low temperature crystallization of the perovskite phase (T<400 degrees C) during fast heating at 60 degrees C/s and the difference in the microstructural evolution of dense and porous films were studied by Rutherford backscattering spectroscopy, XRD, SEM and TEM, Microstructure-property relationships and electrical properties concerning the domain mobility were examined.
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Seifert, A Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland
Cited References Count:11
Record created on 2006-08-21, modified on 2016-08-08