Aluminum nitride thin films for high frequency applications
A piezoelectric thin film sandwiched between two conductors is the basic structure for high frequency bulk acoustic wave devices. For that purpose, AlN thin films deposited by DC reactive sputtering on various electrode materials were investigated, Highly c-axis oriented thin films as thick as 2.5 mu m were grown on various substrates and analyzed. Intrinsic stress values ranging from strong compression to high tension were observed and piezoelectric d(33,f) coefficients up to 3.9 pm/V were measured. The first fabricated acoustic resonators showed a pronounced resonance peak centered at 2 GHz with a very high Q factor.
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Dubois, M. A., Muralt, P., & Sagalowicz, L. (1999). Aluminum nitride thin films for high frequency applications. Ferroelectrics, 224(1-4), 671–678. https://doi.org/10.1080/00150199908210573
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WOS:000081792600032
1999
224
1-4
671
678
Dubois, Ma Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland
222NX
Cited References Count:3
REVIEWED
EPFL