Aluminum nitride thin films for high frequency applications

A piezoelectric thin film sandwiched between two conductors is the basic structure for high frequency bulk acoustic wave devices. For that purpose, AlN thin films deposited by DC reactive sputtering on various electrode materials were investigated, Highly c-axis oriented thin films as thick as 2.5 mu m were grown on various substrates and analyzed. Intrinsic stress values ranging from strong compression to high tension were observed and piezoelectric d(33,f) coefficients up to 3.9 pm/V were measured. The first fabricated acoustic resonators showed a pronounced resonance peak centered at 2 GHz with a very high Q factor.


Published in:
Ferroelectrics, 224, 1-4, 671-678
Year:
1999
ISSN:
0015-0193
Keywords:
Note:
Dubois, Ma Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland
222NX
Times Cited:1
Cited References Count:3
Laboratories:




 Record created 2006-08-21, last modified 2018-01-27


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