Conducting barrier electrodes for direct contact of PZT thin films on tungsten
Two W protection schemes for direct-contact bottom electrodes for PZT thin films, namely RuO2/Cr and RuO2/Ru, were compared with respect to protective performance and contact resistance up to 800 degrees C annealing temperature in oxygen. Cr clearly offers better protection for W than Ru-based schemes by forming a passivating Cr2O3 layer. No Cr is detected on the RuO2 surface, even after annealing at 800 degrees C, due to its entrapment by RuO2 by oxidoreduction. However, the formation of a continuous Cr2O3 film at the RuO2/Cr interface gives rise to an increased contact resistance above 650 degrees C. RuO2/Ru does not show any measurable contact resistance on W, but fails above 600 degrees C.
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Keywords: memory applications
Maeder, T Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland, Part 4 Suppl. S, Yz023, Times Cited:3, Cited References Count:13
Record created on 2006-08-21, modified on 2016-08-08