Infoscience

Journal article

Field-adjusted suppression of the switching polarization in ferroelectric PZT thin films with Pt-electrodes

A surprising non-cumulative effect of the degradation mechanism (fatigue) of the switched polarization (P-r(s)), was observed in MOCVD and sol-gel prepared Pb(Zr0.47Ti0.53)O-3 (PZT) ferroelectric thin films capacitors (FECAP) with Pt-electrodes. This effect is a manifestation of the ability of the suppression mechanism of P-r(s) to self-adjust to the fatiguing field. Experimentally this was shown by performing two consecutive fatigue procedures on the same capacitor. The field used in the first procedure was 15 MV/m, which corresponds to about two times the coercive field (E-c). During this procedure, P-r(s) was reduced (fatigued) by approximately a factor of 10. For the successive fatigue, the field used was twice the first one, i.e., about 4xE(c). During the latter procedure, the previously suppressed P-r(s) was first significantly recovered and then suppressed again as the FECAP would have been virgin and directly fatigued at E approximate to BxE(c). From this remarkable feature and other related results it was concluded that the microscopic mechanism must have a substantial reversible character and the peculiarity to adapt to the used fatiguing field (field self-adjusting).

    Keywords: memories ; fatigue ; model

    Note:

    Colla, EL Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland Ecole Polytech Fed Lausanne, Lab Ceram, CH-1015 Lausanne, Switzerland

    Part 4 Suppl. S

    Yz023

    Times Cited:3

    Cited References Count:13

    Reference

    Record created on 2006-08-21, modified on 2016-08-08

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