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Piezoelectric and dielectric aging in Pb(Zr,Ti)O-3 thin films and bulk ceramics

Piezoelectric and dielectric aging was studied in Pb(Zr,Ti)O-3 (PZT) thin films and bulk ceramics. It was found that piezoelectric aging in thin films obeys the logarithmic time dependence with the relative aging rate much higher than that of the dielectric constant, while comparable aging rates of piezoelectric and dielectric constants were found in PZT ceramics. The origin of piezoelectric aging in PZT films was related to depolarization of the films rather than to suppression of the domain wall motion as was generally accepted for PZT ceramics.

    Keywords: domain-wall ; behavior

    Note:

    Kholkin, Al Ecole Polytech Fed Lausanne,Lab Ceram,Ch-1015 Lausanne,Switzerland

    Wr715

    Times Cited:19

    Cited References Count:17

    Reference

    Record created on 2006-08-21, modified on 2016-08-08

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