Piezoelectric actuation of PZT thin-film diaphragms at static and resonant conditions
The piezoelectric response of silicon diaphragms covered with sputter-deposited PbZr0.45Ti0.55O3 (PZT) films has been investigated in view of their application in ultrasonic micro-actuators. The behaviour of resonance frequencies and quasistatic deflections has been studied as a function of membrane thickness and d.c. bias. The total stress in the films and the piezoelectric constant, d(31), have been derived by means of two different methods. The results are consistent with direct strain measurements by optical interferometry and with bulk ceramic values of identical composition.
Muralt, P Swiss Fed Inst Technol, Lab Ceram Mat, Mxd Ecublens, Ch-1015 Lausanne, Switzerland, Uv649, Times Cited:32, Cited References Count:19
Record created on 2006-08-21, modified on 2016-08-08