Piezoelectric actuation of PZT thin-film diaphragms at static and resonant conditions

The piezoelectric response of silicon diaphragms covered with sputter-deposited PbZr0.45Ti0.55O3 (PZT) films has been investigated in view of their application in ultrasonic micro-actuators. The behaviour of resonance frequencies and quasistatic deflections has been studied as a function of membrane thickness and d.c. bias. The total stress in the films and the piezoelectric constant, d(31), have been derived by means of two different methods. The results are consistent with direct strain measurements by optical interferometry and with bulk ceramic values of identical composition.


Published in:
Sensors and Actuators a-Physical, 53, 1-3, 398-404
Year:
1996
Publisher:
Elsevier
ISSN:
0924-4247
Keywords:
Note:
Muralt, P Swiss Fed Inst Technol, Lab Ceram Mat, Mxd Ecublens, Ch-1015 Lausanne, Switzerland, Uv649, Times Cited:32, Cited References Count:19
Laboratories:




 Record created 2006-08-21, last modified 2018-03-17

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