Depletion and Depolarizing Effects in Ferroelectric Thin-Films and Their Manifestations in Switching and Fatigue
The manifestations of semiconductor depletion and depolarizing effects in switching and fatigue are studied and compared. It is shown that these effects play important but quite different roles in switching. The depletion effect strongly influences the values of the coercive field, E(c), and is responsible for its film-thickness dependence. The depolarizing effect influences significantly other parameters of the hysteresis loops. It is shown that the inverse thickness dependence of E(c) can not be attributed to the presence of a non-switching layer. Contribution of the effects in question to fatigue of the loop parameters is discussed.
WOS:A1995QW49900027
1995
6
1-4
309
320
Tagantsev, Ak Ecole Polytech Fed Lausanne,Dept Mat,Ceram Lab,Ch-1015 Lausanne,Switzerland Polish Acad Sci,Inst Molec Phys,Poznan,Poland
Qw499
Cited References Count:21
REVIEWED