Compact Modeling of MOSFET in VHDL-AMS

In this chapter, we present the capabilities of the VHDL-AMS hardware description language for developing compact models. After a brief description of the VHDL-AMS language, we present two meaningful case studies on design oriented models of MOSFET. The first study focuses on the EKV v2.6 MOSFET model and takes into account the thermo-electrical interaction and the extrinsic aspects. The EKV v2.6 model uses linearization with respect to surface potential, resulting in physically well-based expressions for the whole model. The second study is a simplified version of the MM11 Philips model that takes into account the quantum mechanical effects. MM11 is a compact MOSFET model based on the formulation of the surface potential.


Published in:
Transistor Level Modeling for Analog/RF IC Design, 243-269
Year:
2006
Publisher:
Springer
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 Record created 2006-02-10, last modified 2018-01-27

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