Submicrometer Hall devices fabricated by focused electron-beam-induced deposition

Hall devices having an active area of about (500 nm)2 are fabricated by focused electron-beam-induced deposition. The deposited material consists of cobalt nanoparticles in a carbonaceous matrix. The realized devices have, at room temperature, a current sensitivity of about 1 V/AT, a resistance of a few kilo-ohms, and can be biased with a maximum current of about 1 mA. The room-temperature magnetic field resolution is about 10 uT/Hz^1/2 at frequencies above 1 kHz.


Published in:
Virtual Journal of Nanoscale Science & Technology, 86, 042503
Year:
2005
Laboratories:




 Record created 2006-02-01, last modified 2018-12-03


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)