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Abstract

A simplified process to fabricate high aspect ratio nanostructures in silicon combining electron beam lithography and deep reactive ion etching (DRIE) is presented. A stable process (HARSiN) has been developed without the need for complicated resist/hard mask processing or complex dry etch technologies. This is achieved using commercially available ZEP520A resist from Nippon Zeon Co., Ltd which allows high resolution ebeam imaging (50nm) as well as affords high plasma etch resistance to a continuous room temperature carbon/fluorine DRIE Si etch chemistry developed in this work. Using this simplified lithography/etch process sequence, high aspect ratio (>14:1) silicon nanometer structures are reported for nanotechnology applications, which are reviewed in this paper.

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