HIGH ASPECT RATIO SiLICON NANOFABRICATION (HARSiN) TECHNOLOGY
A simplified process to fabricate high aspect ratio nanostructures in silicon combining electron beam lithography and deep reactive ion etching (DRIE) is presented. A stable process (HARSiN) has been developed without the need for complicated resist/hard mask processing or complex dry etch technologies. This is achieved using commercially available ZEP520A resist from Nippon Zeon Co., Ltd which allows high resolution ebeam imaging (50nm) as well as affords high plasma etch resistance to a continuous room temperature carbon/fluorine DRIE Si etch chemistry developed in this work. Using this simplified lithography/etch process sequence, high aspect ratio (>14:1) silicon nanometer structures are reported for nanotechnology applications, which are reviewed in this paper.
Record created on 2005-11-03, modified on 2016-08-08