Submicrometer Hall devices fabricated by focused electron-beam-induced deposition

Hall devices having an active area of about (500 nm)(2) are fabricated by focused electron-beam-induced deposition. The deposited material consists of cobalt nanoparticles in a carbonaceous matrix. The realized devices have, at room temperature, a current sensitivity of about 1 V/AT, a resistance of a few kilo-ohms, and can be biased with a maximum current of about 1 mA. The room-temperature magnetic field resolution is about 10 muT/Hz(1/2) at frequencies above 1 kHz.


Published in:
Applied Physics Letters, 86, 4, 042503 (3 pages)
Year:
2005
Publisher:
American Institute of Physics
ISSN:
0003-6951
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 Record created 2005-11-02, last modified 2018-03-18

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