A novel RF MEMS technological platform

A novel MEMS technological platform for RF passive components, namely RF MEMS switches, tuneable capacitors and high-Q suspended inductors, is reported. The proposed process employs a metal (Al, AlSi or Cu) as active movable layer and amorphous silicon or polycrystalline silicon as sacrificial layers, providing multi-air-gaps. Various types of substrates like bulk silicon and SOI can be used. Full-dry releasing of suspended beams and membranes is performed with SF_6 or XeF_2, with unrivalled yield/reproducibility compared with any other wet etching techniques. The platform is used to validate new MEMS architectures and concepts, such as the suspended-gate MOSFET that can serve as both RF capacitive switches and tuneable RF capacitors.


Published in:
Proceedings of the IEEE 28th Annual Conference of the Industrial Electronics Society (IECON 02), 4, 3052-3056
Presented at:
28th Annual Conference of the IEEE Industrial-Electronics-Society, SEVILLE, SPAIN, NOV 05-08, 2002
Year:
2002
Laboratories:


Note: The status of this file is: EPFL only
The status of this file is: Involved Laboratories Only


 Record created 2005-10-21, last modified 2018-03-18

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2002_IEEE_IECON_RF_MEMS_Techno - Download fulltext
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