A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization
This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 μm CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multiple PIN diode bars integrated on top of a SOI silicon waveguide and can be operated either at: (I) high-frequency (few MHz) based on the plasma dispersion effect and (II) low frequency (<1 MHz) based on the thermo-optic effect. The device main characteristics and figures of merit are presented and discussed.
Keywords: CMOS integrated circuits ; electro-optical devices ; electro-optical filters ; integrated optoelectronics ; Mach-Zehnder interferometers ; optical communication equipment ; optical fabrication ; p-i-n photodiodes ; silicon-on-insulator ; thermo-optical effects ; CMOS SOI unbalanced Mach-Zehnder interferometer ; design ; simulations ; fabrication ; characterization ; adapted post-processing ; waveguide sidewalls ; electro-optical device ; multiple PIN diode bars ; SOI silicon waveguide ; high frequency ; plasma dispersion effect ; telecommunication applications ; low frequency ; thermo-optic effect ; device main characteristics ; figures of merit ; 1.2 micron ; Si
Record created on 2005-10-19, modified on 2016-08-08