A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization

This paper reports on a novel, simple yet reliable, unbalanced SOI Mach-Zehnder (M-Z) interferometer architecture based on 1.2 μm CMOS process and adapted post-processing for the waveguide sidewalls. The fabricated electro-optical device is based on multiple PIN diode bars integrated on top of a SOI silicon waveguide and can be operated either at: (I) high-frequency (few MHz) based on the plasma dispersion effect and (II) low frequency (<1 MHz) based on the thermo-optic effect. The device main characteristics and figures of merit are presented and discussed.


Published in:
Proceedings of IEEE International SOI Conference, 2001, 137-138
Presented at:
IEEE International SOI Conference, 2001, Durango, CO, USA, 1-4 Oct. 2001
Year:
2001
Keywords:
Note:
Cat. No.01CH37207
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2005-10-19, last modified 2018-03-18

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