3-D integrable optoelectronic devices for telecommunications ICs

The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integrated circuits. A 5 MHz bandwidth for 2×2 switch and a thermal compensation principle for modulators is demonstrated.


Published in:
Proceedings of IEEE International Solid-State Circuits Conference (ISCC), 1, 360-361
Presented at:
IEEE International Solid-State Circuits Conference (ISCC), San Francisco, CA, 3-7 Feb. 2002
Year:
2002
Keywords:
Laboratories:


Note: The status of this file is: EPFL only


 Record created 2005-10-19, last modified 2018-03-18

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