3-D integrable optoelectronic devices for telecommunications ICs
The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integrated circuits. A 5 MHz bandwidth for 2×2 switch and a thermal compensation principle for modulators is demonstrated.
Keywords: Integrated optoelectronics ; Telecommunication systems ; CMOS integrated circuits ; Silicon on insulator technology ; Bandwidth ; Optical switches ; Interferometers ; Modulators ; Thermal effects
Record created on 2005-10-19, modified on 2016-08-08