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  4. Atomic force microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films
 
research article

Atomic force microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films

Porti, M.
•
Nafrı́a, M.
•
Blüm, M.C.  
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2003
Surface Science
  • Details
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Type
research article
DOI
10.1016/S0039-6028(03)00150-X
Author(s)
Porti, M.
Nafrı́a, M.
Blüm, M.C.  
Aymerich, X.
Sadewasser, S.
Date Issued

2003

Published in
Surface Science
Volume

532-535

Start page

727

End page

731

Subjects

Atomic force microscopy

•

Dielectric phenomena

•

Electrical transport (conductivity, resistivity, mobility, etc.)

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

EPFL units
ENAC  
Available on Infoscience
May 29, 2024
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/208147
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