Loading...
research article
Analytical Modeling of Cryogenic Subthreshold Currents in 22-nm FDSOI Technology
January 1, 2024
The transistor compact model is crucial but has yet to mature for cryogenic electronics. This paper presents a sophisticated analytical model of the MOSFET subthreshold current at cryogenic temperatures, accounting for the thermionic, hopping, source-to-drain tunneling transports, and the Gaussian-distributed interface traps to bridge the gap. Hopping and source-to-drain tunneling transports can co-exist in the subthreshold regime, leading to subthreshold saturation strongly correlated to channel length and drain voltages.
Use this identifier to reference this record
Loading...
Name
document.pdf
Type
Publisher's version
Access type
openaccess
License Condition
CC BY-NC-ND
Size
560.63 KB
Format
Adobe PDF
Checksum (MD5)
9d35f4aa8989d954581ecd8ae5b18c7f