Energy Efficient Logic and Memory Design With Beyond-CMOS Magnetoelectric Spin-Orbit (MESO) Technology Toward Ultralow Supply Voltage
Devices based on the spin as the fundamental computing unit provide a promising beyond-complementary metal-oxide-semiconductor (CMOS) device option, thanks to their energy efficiency and compatibility with CMOS. One such option is a magnetoelectric spin-orbit (MESO) device, an attojoule-class emerging technology promising to extend Moore's law. This article presents circuit design and optimization techniques, such as device stacking and a canary circuit-based asynchronous clock pulse generation scheme for MESO device technology. With these targeted circuit techniques, the MESO energy efficiency can be improved by similar to 1.5 x. Novel architectures for arithmetic logic and effective realization of in-memory computing are also proposed that utilize the unique properties of this promising new technology.
WOS:001121831600008
2023-12-01
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Funder | Grant Number |
Intel Semiconductor Corporation | |