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conference paper
Extended Temperature Modeling of InGaAs/InP SPADs
January 1, 2023
Ieee 53Rd European Solid-State Device Research Conference, Essderc 2023
We present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to 300K. All simulations are performed completely in TCAD and match well with the measurement results of our novel selective area growth (SAG) based InGaAs/InP SPAD. An optimized simulation environment has the potential of estimating the device performance without costly fabrication iterations. Hence, it will accelerate the development of high-performance InGaAs/InP SPADs.
Type
conference paper
Web of Science ID
WOS:001090588900035
Authors
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Lee, M. -J.
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SpringThorpe, A. J.
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Walker, A. W.
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Flueraru, C.
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Pitts, O. J.
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Publication date
2023-01-01
Publisher
Published in
Ieee 53Rd European Solid-State Device Research Conference, Essderc 2023
ISBN of the book
979-8-3503-0423-7
Publisher place
New York
Start page
140
End page
143
Subjects
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Lisbon, PORTUGAL | SEP 11-14, 2023 | |
Funder | Grant Number |
Secure Networks Challenge Program at the National Research Council of Canada | |
Available on Infoscience
February 19, 2024
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