A time-resolved multi-gate ion sensitive field effect transducer, including a silicon layer, a P-doped region in the silicon layer and a first electrode in electric connection with the P doped region, a N-doped region in the silicon layer and a second electrode in electric connection with the N-doped region, a general channel area defined in the silicon layer between the P-doped and N-doped regions, a first gate structure forming a sensing area, the first gate structure including a first insulating layer on the silicon layer, the sensing area configured to receive an electrolyte solution, and a third electrode at the sensing area configured to be in contact with the electrolyte solution, the first gate structure configured to generate a first channel area in the silicon layer for providing a first potential barrier, and a second gate structure configured to generate a second channel area in the silicon layer for providing a second potential barrier.