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  4. Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology
 
conference paper

Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology

Han, Hung-Chi  
•
Jazaeri, Farzan  
•
D'Amico, Antonio  
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January 1, 2022
Essderc 2022 - Ieee 52Nd European Solid-State Device Research Conference (Essderc)
52nd IEEE European Solid-State Device Research Conference (ESSDERC)

This paper presents the RF characterization and modeling of a 22nm FDSOI technology down to 3.3K for quantum computing applications. The equivalent small-signal components are extracted analytically and automatically from the de-embedded two-port Y -parameters using an iteratively re-weighted least-squares method. The dynamic self-heating effect impacting R(Y-22) is characterized at different temperatures and bias points.

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Type
conference paper
DOI
10.1109/ESSDERC55479.2022.9947192
Web of Science ID

WOS:000904209900014

Author(s)
Han, Hung-Chi  
Jazaeri, Farzan  
D'Amico, Antonio  
Zhao, Zhixing
Lehmann, Steffen
Kretzschmar, Claudia
Charbon, Edoardo  
Enz, Christian  
Date Issued

2022-01-01

Publisher

IEEE

Publisher place

New York

Published in
Essderc 2022 - Ieee 52Nd European Solid-State Device Research Conference (Essderc)
ISBN of the book

978-1-6654-8497-8

Series title/Series vol.

Proceedings of the European Solid-State Device Research Conference

Start page

269

End page

272

Subjects

Engineering, Electrical & Electronic

•

Engineering

•

cryogenic electronics

•

cryo-cmos

•

fdsoi

•

cryo-modeling

•

quantum computing

•

radio frequency

•

self-heating

•

small-signal

•

noise

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
ICLAB  
Event nameEvent placeEvent date
52nd IEEE European Solid-State Device Research Conference (ESSDERC)

Milan, ITALY

Sep 19-22, 2022

Available on Infoscience
February 13, 2023
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/194757
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