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research article
Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement
February 1, 2023
In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is confirmed from deep depletion to accumulation and from linear to saturation, based on the numerical solution of the Schrodinger equation using Technology Computer Aided Design (TCAD) simulations. This represents an important stage toward AC small signal analysis of junctionless nanowire-based circuits.
Type
research article
Web of Science ID
WOS:000901098300004
Authors
Publication date
2023-02-01
Publisher
Published in
Volume
200
Article Number
108544
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
January 30, 2023
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