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conference paper
Study of Donor-like Surface Trap Emission in GaN HEMTs
January 1, 2021
2021 Iranian International Conference On Microelectronics (Iicm 2021)
Gate-lag induced trapping effects due to donor-like surface traps located in the access regions between the electrodes of AlGaN/GaN HEMTs are investigated through TCAD transient simulations. The effects of variation in trap energy level and temperature on the current collapse transient characteristics have been studied. A simple physical model is proposed (based on the Arrhenius relation) to obtain the emission time constants versus trap energy level and temperature which is in a good agreement with TCAD simulations.
Type
conference paper
Web of Science ID
WOS:000852728300004
Authors
Publication date
2021-01-01
Publisher
Published in
2021 Iranian International Conference On Microelectronics (Iicm 2021)
ISBN of the book
978-1-6654-8060-4
Publisher place
New York
Peer reviewed
REVIEWED
EPFL units
Event name | Event place | Event date |
Tehran, IRAN | Dec 22-24, 2021 | |
Available on Infoscience
September 26, 2022
Use this identifier to reference this record