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research article

Phonon-Assisted Luminescence in Defect Centers from Many-Body Perturbation Theory

Libbi, Francesco  
•
de Melo, Pedro Miguel M. C.
•
Zanolli, Zeila
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April 18, 2022
Physical Review Letters

Phonon-assisted luminescence is a key property of defect centers in semiconductors, and can be measured to perform the readout of the information stored in a quantum bit, or to detect temperature variations. The investigation of phonon-assisted luminescence usually employs phenomenological models, such as that of Huang and Rhys, with restrictive assumptions that can fail to be predictive. In this work, we predict luminescence and study exciton-phonon couplings within a rigorous many-body perturbation theory framework, an analysis that has never been performed for defect centers. In particular, we study the optical emission of the negatively charged boron vacancy in 2D hexagonal boron nitride, which currently stands out among defect centers in 2D materials thanks to its promise for applications in quantum information and quantum sensing. We show that phonons are responsible for the observed luminescence, which otherwise would be dark due to symmetry. We also show that the symmetry breaking induced by the static Jahn-Teller effect is not able to describe the presence of the experimentally observed peak at 1.5 eV.

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Type
research article
DOI
10.1103/PhysRevLett.128.167401
Web of Science ID

WOS:000804564600001

Author(s)
Libbi, Francesco  
de Melo, Pedro Miguel M. C.
Zanolli, Zeila
Verstraete, Matthieu Jean
Marzari, Nicola  
Date Issued

2022-04-18

Publisher

AMER PHYSICAL SOC

Published in
Physical Review Letters
Volume

128

Issue

16

Article Number

167401

Subjects

Physics, Multidisciplinary

•

Physics

•

coherence

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
THEOS  
Available on Infoscience
June 20, 2022
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/188649
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