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  4. An Analog-Assisted Digital LDO With Single Subthreshold Output pMOS Achieving 1.44-fs FOM
 
research article

An Analog-Assisted Digital LDO With Single Subthreshold Output pMOS Achieving 1.44-fs FOM

Xu, Li
•
Choo, Kyojin  
•
Blaauw, David
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2021
IEEE Solid-State Circuits Letters

This letter describes an analog-assisted digital LDO that cascades a conventional digital LDO structure with a single, large output pMOS biased in subthreshold to enable fast response to output voltage droop. By digitally controlling the gate voltage of the output pMOS, the operating regime of the output transistor is decoupled from the input voltage. In addition, a 2-pF capacitor between the output voltage and the gate of the output pMOS creates a high-pass path to boost the output current when voltage droops occur. The proposed design is fabricated in 28-nm CMOS, and it enables a uniform transient response over an input voltage range of 0.5-0.9 V. The measured voltage droop when load current changes from 10 to 60 mA (1-ns edge time) is 110 mV at input voltages of both 0.5 and 0.9 V, resulting in a speed FOM of 1.44 fs.

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Type
research article
DOI
10.1109/LSSC.2021.3107870
Author(s)
Xu, Li
•
Choo, Kyojin  
•
Blaauw, David
•
Sylvester, Dennis
Date Issued

2021

Publisher

IEEE

Published in
IEEE Solid-State Circuits Letters
Volume

4

Start page

154

End page

157

Subjects

Analog-assisted (AA)

•

digital LDO

•

fast transient response

•

subthreshold

Editorial or Peer reviewed

REVIEWED

Written at

OTHER

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MSIC-LAB  
Available on Infoscience
April 1, 2022
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/186849
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