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research article
Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor
October 1, 2021
The operation principle of a semiconductor nanowire (NW) ion-sensitive field-effect transistor (ISFET), denoted for pH sensing, is studied within the framework of this work. The physical processes in the system are mathematically modelled and presented in details. The dependences of the NW ISFET current-pH characteristics on NW geometrical and physical parameters are analyzed. The plots of the ISFET sensitivity versus pH at different NW radii, the thicknesses of the oxide layer, and the NW doping densities are presented. The obtained results are in qualitative agreement with the experimental data.
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Type
research article
Web of Science ID
WOS:000731507100006
Authors
Publication date
2021-10-01
Publisher
Volume
56
Issue
4
Start page
324
End page
331
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
January 1, 2022