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research article
Nonhysteretic Condition in Negative Capacitance Junctionless FETs
This article analyzes the design space stability of negative capacitance double-gate junctionless field-effect transistors (NCDG JLFETs). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and critical thickness of the ferroelectric layers giving rise to the negative capacitance behavior. The impact of the technological parameters is investigated in order to ensure the hysteresis-free operation. Finally, the stability of NCDG JLFET is predicted over a wide range of temperatures from 77 to 400 K. This approach has been assessed with numerical TCAD simulations.
Use this identifier to reference this record
Type
research article
Web of Science ID
WOS:000734080800001
Authors
Publication date
2022
Published in
Volume
69
Issue
2
Start page
820
End page
826
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
January 1, 2022