Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for thep-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal-organic vapor-phase epitaxy -grown epitaxial layer ofp-doped GaN. Circular 200 mu m-sized violet-emitting LEDs with ap-ncontact distance as low as 3 mu m exhibit a turn-on voltage of 3 V, and an emitting optical power at 395 nm of a few microwatts. Electroluminescence spectrum investigation shows that the emissive process can be ascribed to four different recombination transitions, dominated by the electron-hole recombinations on the ZnO side.