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research article
Quasi-vertical GaN-on-Si reverse blocking power MOSFETs
April 1, 2021
We demonstrate quasi-vertical reverse blocking (RB) MOSFETs on 6.7 mu m thick GaN grown on a 6 inch Si substrate by metalorganic chemical vapor deposition. The RB capability was achieved by replacing the ohmic drain with a quasi-vertical Schottky drain, resulting in a RB voltage of similar to 300 V while preserving the ON-resistance (R-on,R-sp). Schottky contacts on etched i-GaN surface were realized through an optimized fabrication process based on tetramethylammonium hydroxide treatments. The fabricated RB-MOSFET had a low R-on,R-sp of 4.75 m omega cm(2), current density of similar to 0.9 kA cm(-2) and a forward blocking voltage of 570 V.
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Type
research article
Web of Science ID
WOS:000637834400001
Authors
Publication date
2021-04-01
Publisher
Published in
Volume
14
Issue
4
Article Number
046503
Peer reviewed
REVIEWED
EPFL units
Available on Infoscience
May 8, 2021