Crystal Phase Tuning in Planar Films of III-V Semiconductors
2019
Abstract
We report on the control of the crystal phase of micron-sized planar III-V semiconductor films grown on top of standard (001) oriented substrates. We achieve this by confining the MOCVD process using SiO2 templates and selecting specific growth planes. We further characterize InP films using STEM, PL and CL and find phase purities of 100% and 97% for zinc-blende (ZB) and wurtzite (WZ), respectively.
Details
Title
Crystal Phase Tuning in Planar Films of III-V Semiconductors
Author(s)
Staudiner, Philipp ; Tappy, Nicolas ; Mauthe, Svenja ; Moselund, Kirsten ; Fontcuberta i Morral, Anna ; Schmid, Heinz
Published in
2019 Compound Semiconductor Week (Csw)
Conference
Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019
Date
2019-01-01
Publisher
New York, IEEE
ISBN
978-1-7281-0080-7
Keywords
Other identifier(s)
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Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Scientific production and competences > STI - School of Engineering > IMX - Institute of Materials > LMSC - Laboratory of Semiconductor Materials
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Scientific production and competences > STI - School of Engineering > IMX - Institute of Materials > LMSC - Laboratory of Semiconductor Materials
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2020-07-09