Permanent photodoping of plasmonic gallium-ZnO nanocrystals
2020
Abstract
Donor dopants in oxide semiconductors are compensated not only by valuable electrons but also by other point defects, leading to a decrease in electric conductivity and infrared absorption. We demonstrate that the electron compensation mechanism in Ga doped ZnO nanocrystals can be promoted by photodoping. Unexpectedly, the electrons from photodoping are stable in the open air for months.
Details
Title
Permanent photodoping of plasmonic gallium-ZnO nanocrystals
Author(s)
Zukuls, Anzelms ; Eglitis, Raivis ; Kaambre, Tanel ; Ignatans, Reinis ; Smits, Krisjanis ; Rubenis, Kristaps ; Zacs, Dzintars ; Sutka, Andris
Published in
Nanoscale
Volume
12
Issue
12
Pages
6624-6629
Date
2020-03-28
Publisher
Cambridge, ROYAL SOC CHEMISTRY
ISSN
2040-3364
2040-3372
2040-3372
Keywords
Other identifier(s)
View record in Web of Science
Laboratories
IMX
Record Appears in
Scientific production and competences > STI - School of Engineering > IMX - Institute of Materials > UNATTRIBUTED-IMX - IMX - Unattributed publications
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2020-05-02