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research article

Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

Yesayan, Ashkhen
•
Jazaeri, Farzan  
•
Sallese, Jean-Michel  
March 1, 2020
Ieee Transactions On Electron Devices

In this article, we present a theoretical analysis of a junctionless (JL), ion-sensitive, field-effect-transistor (ISFET), self-consistently combining the electrochemical interaction between the semiconductor-insulator interface and the surrounding electrolyte medium. Incorporating charge-based core relationships for the nanowire (NW) and planar double gate (DG) JL FETs with basic relations governing the electrolyte-insulator proton exchanges, we predict the output characteristics of the NW and DG JL ISFETs with respect to pH for all the regions of operation. This hybrid charge-based approach of JL ISFETs is fully validated by COMSOL Multiphysics simulations without the need to introduce any fitting parameters. These developments are suitable for implementation in circuit simulators as well as for fast prototyping by tuning the technological parameters and estimate their impact on the device performances, including the electrolyte medium.

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Type
research article
DOI
10.1109/TED.2020.2965167
Web of Science ID

WOS:000519593800058

Author(s)
Yesayan, Ashkhen
Jazaeri, Farzan  
Sallese, Jean-Michel  
Date Issued

2020-03-01

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Published in
Ieee Transactions On Electron Devices
Volume

67

Issue

3

Start page

1157

End page

1164

Subjects

Engineering, Electrical & Electronic

•

Physics, Applied

•

Engineering

•

Physics

•

double-gate field-effect-transistors (dg-fets)

•

ion-sensitive fet (isfet)

•

junctionless (jl)

•

nanowire (nw)

•

ph sensitivity

•

sensor

•

fets

•

transistors

•

operation

•

sensor

•

cmos

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
GR-SCI-IEL  
Available on Infoscience
April 11, 2020
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/168114
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