Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Journal articles
  4. IGCT Low-Current Switching – TCAD and Experimental Characterization
 
research article

IGCT Low-Current Switching – TCAD and Experimental Characterization

Stamenkovic, Dragan  
•
Vemulapati, Umamaheswara Reddy
•
Stiasny, Thomas
Show more
2019
IEEE Transactions on Industrial Electronics

Utilization of the Integrated Gate Commutated Thyristor as a semiconductor switch in the Series Resonant Converter for isolated medium voltage DC-DC conversion offers an opportunity for high conversion efficiency while operating at the high switching frequency. Low conduc- tion losses of the switch as well as decreased switching losses due to zero-voltage turn-on and low current turn-off in the sub-resonant operating regime are reflected in the efficiency increase of the converter. This paper explores the switching behavior of the semiconductor device under low currents while giving insight into the achievable turn- off energy losses and duration of the turn-off transients, as information required during the design process of series resonant converter. Experimental measurements confirm trends observed with simulation results related to turn- off delay process, providing further understanding of the switching losses and achievable performances under resonant mode of operation.

  • Files
  • Details
  • Metrics
Loading...
Thumbnail Image
Name

IEEE_TIE_Stamenkovic.pdf

Access type

openaccess

Size

4.09 MB

Format

Adobe PDF

Checksum (MD5)

68b2a0ff4234986b2e1f987b5a443ae6

Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés