Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

This paper demonstrates and experimentally reports the highest ever performance boosting in strained silicon-nanowire homojunction TFETs with negative capacitance, provided by matched PZT capacitors. Outstanding enhancements of I on , g m , and overdrive are analyzed and explained by most effective reduction of body factor, m <; 1, especially for V G >V T , which greatly amplify the control on the surface potential TFET, which dictates a highly non-linear BTBT regime. We achieve a full non-hysteretic negative-capacitance switch configuration, suitable for logic applications, and report non-current increase by a factor of 500x, voltage overdrive of IV, transconductance increase of up to 5× 10 3 x, and subthreshold swing improvement.


Published in:
2017 Silicon Nanoelectronics Workshop. Workshop Abstracts
Presented at:
2017 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 4-5, 2017
Year:
Jan 01 2018
Publisher:
IEEE
ISBN:
978-4-8634-8647-8
Laboratories:


Note: The status of this file is: Anyone
The status of this file is: EPFL only


 Record created 2020-01-24, last modified 2020-10-25

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