Cryogenic MOSFET Threshold Voltage Model

This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson’s equation including bandgap widening, intrinsic carrier-density scaling, and incomplete ionization. We demonstrate that accounting for incomplete ionization in the expression of the threshold voltage is critical for an accurate estimation of the current. The model is validated with our experimental results from nMOSFETs of a 28-nm CMOS process. The developed model is a key element for a cryo-CMOS compact model and can serve as a guide to optimize processes for high-performance cryo-computing and ultra-low-power quantum computing.


Published in:
ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)
Presented at:
49th IEEE European Solid-State Device Research Conference - ESSDERC 2019), Cracow, Poland, 23-26 Sept.ember, 2019
Year:
Nov 18 2019
Publisher:
IEEE
ISBN:
978-1-7281-1539-9
Keywords:
Other identifiers:
Laboratories:




 Record created 2020-01-10, last modified 2020-01-25


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