Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor (CMOS) integration. This paper reports for the first time, a multianalyte sensing platform that incorporates high performance, high yield, high robustness, three-dimensional-extended-metal-gate ISFETs (3D-EMG-ISFETs) realized by the postprocessing of a conventional 0.18 mu m CMOS technology node. The detection of four analytes (pH, Na+, K+, and Ca2+) is reported with excellent sensitivities (58 mV/pH, -57 mV/dec(Na+),-48 mV/dec(K+), and -26 mV/dec(Ca2+) close to the Narnstian limit, and high selectivity, achieved by the use of highly selective ion selective membranes based on postprocessing integration steps aimed at eliminating any significant sensor hysteresis and parasitics. We are reporting simultaneous time-dependent recording of multiple analytes, with high selectivities. In vitro real sweat tests are carried out to prove the validity of our sensors. The reported sensors have the lowest reported power consumption, being capable of operation down to 2 pW/sensor. Due to the ultralow power consumption of our ISFETs, we achieve and report a final four-analyte passive system demonstrator including the readout interface and the remote powering of the ISFET sensors, all powered by an radio frequency (RF) signal.


Published in:
Acs Sensors, 4, 8, 2039-2047
Year:
Aug 01 2019
ISSN:
2379-3694
Keywords:
Laboratories:




 Record created 2019-09-19, last modified 2020-04-20


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