Analog RF and mm-Wave Design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA
The state-of-the art RF and millimeter-wave first-cut circuits design requires simple hand calculation methods to avoid time-consuming iterative simulations. The classical MOSFET sizing methods used in advanced technologies, still rely on questionable and inaccurate concepts. Moreover, the pessimistic rules of thumb proposed for older bulk technologies are no more useful and lead to overdesign. This work takes advantage of the Moderate Inversion and uses low and high frequency figures of merit to provide a convenient sizing method for a 35 GHz Low Noise Amplifier (LNA) in 28 nm UTBB FDSOI technology.
WOS:000480458200008
2018-01-01
978-8-3635-7814-5
New York
57
62
REVIEWED
Event name | Event place | Event date |
Gdynia, Poland | Jun 21-23, 2018 | |