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conference paper not in proceedings
Low-Frequency Noise Behavior of nMOSFETs with Different Al2O3 Capping Layer Thickness and TiN Gate
2019
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Name
ICNF_2019_Full_Paper_12.pdf
Access type
openaccess
Size
591.25 KB
Format
Adobe PDF
Checksum (MD5)
0a763a88d136935e06f326ccc41925c1