Notice détaillée
Titre
Wang, Zhenyu
Sciper ID
300908
Laboratoires affiliés
LANES
Publications
A large-scale integrated vector–matrix multiplication processor based on monolayer molybdenum disulfide memories
Combining thermal scanning probe lithography and dry etching for grayscale nanopattern amplification
Composition-tunable transition metal dichalcogenide nanosheets via a scalable, solution-processable method
How to Achieve Large-Area Ultra-Fast Operation of MoS 2 Monolayer Flash Memories?
Logic-in-memory based on an atomically thin semiconductor
Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2
Stable Al2O3 Encapsulation of MoS2 ‐FETs Enabled by CVD Grown h‐BN
Substitutional p‐type Doping in NbS2‐MoS2 Lateral Heterostructures Grown by MOCVD
Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides
Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates
Voir toutes les publications (11)
Combining thermal scanning probe lithography and dry etching for grayscale nanopattern amplification
Composition-tunable transition metal dichalcogenide nanosheets via a scalable, solution-processable method
How to Achieve Large-Area Ultra-Fast Operation of MoS 2 Monolayer Flash Memories?
Logic-in-memory based on an atomically thin semiconductor
Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2
Stable Al2O3 Encapsulation of MoS2 ‐FETs Enabled by CVD Grown h‐BN
Substitutional p‐type Doping in NbS2‐MoS2 Lateral Heterostructures Grown by MOCVD
Super-resolved Optical Mapping of Reactive Sulfur-Vacancies in Two-Dimensional Transition Metal Dichalcogenides
Zero-Bias Power-Detector Circuits based on MoS2 Field-Effect Transistors on Wafer-Scale Flexible Substrates
Voir toutes les publications (11)
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