1.55-mu m wavelength wafer-fused OP-VECSELs in flip-chip configuration

Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-mu m wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlAs distributed Bragg reflectors, which were incorporated in a linear and a V-cavity configurations. A maximum output power of 3.65 W was achieved for a heatsink temperature of 11 degrees C and employing a 2.2% output coupler. The laser exhibited circular beam profiles for the full emission power range. The demonstration represents more than 10-fold increase of the output power compared to state-of-the-art flip-chip VECSELs previously demonstrated at the 1.55-mu m wavelength range, and opens a new perspective for developing practical VECSEL-based laser system for applications such as LIDAR, spectroscopy, communications and distributed sensing.


Published in:
Vertical External Cavity Surface Emitting Lasers (Vecsels) Ix, 10901, 1090103
Presented at:
Conference on Vertical External Cavity Surface Emitting Lasers (VECSELs) IX, San Francisco, CA, Feb 05-06, 2019
Year:
Jan 01 2019
Publisher:
Bellingham, SPIE-INT SOC OPTICAL ENGINEERING
ISSN:
0277-786X
1996-756X
ISBN:
978-1-5106-2445-0
Keywords:
Laboratories:




 Record created 2019-07-02, last modified 2019-10-07


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)