Full SPICE Simulation of a CMOS Active Pixel Sensor with Generalized Devices

We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor and the circuit. The photodiode is simulated at the physics level by means of the so-called generalized devices, without any predefined compact model. Conversely, regular compact models are used for MOSFETs. Modeling with Generalized Devices takes into account in SPICE simulations both the layout and the physics of the photodiode, that is drift-diffusion transport, optical generation and recombination of excess carriers, capacitive effects and surface recombination. This approach is supported by T CAD simulations and opens the way to full SPICE simulation of Active Pixel Sensor down to the semiconductor level.

Published in:
2019 Latin American Electron Devices Conference (Laedc), 72-75
Presented at:
Latin American Electron Devices Conference (LAEDC), Armenia, COLOMBIA, February 24-27, 2019
Jan 01 2019
New York, IEEE

 Record created 2019-06-24, last modified 2019-09-17

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