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research article
Electroluminescence of Single InGaN/GaN Micropyramids
February 1, 2019
The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520-590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.
Type
research article
Web of Science ID
WOS:000467140500003
Authors
Publication date
2019-02-01
Publisher
Published in
Volume
126
Issue
2
Start page
118
End page
123
Peer reviewed
REVIEWED
Available on Infoscience
June 19, 2019
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