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research article

Electroluminescence of Single InGaN/GaN Micropyramids

Babichev, A. V.
•
Denisov, D. V.
•
Lavenus, P.
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February 1, 2019
Optics And Spectroscopy

The results of the fabrication of technological regimes of formation and the study of the optical properties of light emitting diodes (LED) micropyramids based on InGaN/GaN are presented. The structures were formed by the method of Metalorganic vapour-phase epitaxy. LED hetero structures based on single micropyramids demonstrate electroluminescence at a wavelength of 520-590 nm, which is shifted to the shortwave length region with increasing current pumping. These light-emission sources are of interest for the fabrication of high-intensity point light sources for biosensor applications.

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Type
research article
DOI
10.1134/S0030400X19020036
Web of Science ID

WOS:000467140500003

Author(s)
Babichev, A. V.
Denisov, D. V.
Lavenus, P.
Jacopin, G.  
Tchernycheva, M.
Julien, F. H.
Zhang, H.
Date Issued

2019-02-01

Publisher

PLEIADES PUBLISHING INC

Published in
Optics And Spectroscopy
Volume

126

Issue

2

Start page

118

End page

123

Subjects

Optics

•

Spectroscopy

•

light-emitting-diodes

•

gan nanowires

•

pyramids

•

growth

•

epitaxy

•

arrays

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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Available on Infoscience
June 19, 2019
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/158292
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