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conference paper
28-nm Bulk and FDSOI Cryogenic MOSFET (Invited Paper)
2018
Proceedings of the 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2018)
This paper presents an intensive overview of the characterization and modeling of advanced 28-nm hulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.
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Name
Beckers ICTA 2018.pdf
Type
Preprint
Access type
openaccess
Size
5.45 MB
Format
Adobe PDF
Checksum (MD5)
c6409ba4ac2a311f2ad402e8aa677748