28-nm Bulk and FDSOI Cryogenic MOSFET (Invited Paper)
Beckers, Arnout; Jazaeri, Farzan; Enz, Christian
2018

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Abstract

This paper presents an intensive overview of the characterization and modeling of advanced 28-nm hulk and FDSOI CMOS processes operating continuously from room down to deep cryogenic temperature.

Details

Title 28-nm Bulk and FDSOI Cryogenic MOSFET (Invited Paper)
Author(s) Beckers, Arnout ; Jazaeri, Farzan ; Enz, Christian
Published in Proceedings of the 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2018)
Pages 45-46
Conference IEEE International Conference on Integrated Circuits, Technologies and Applications (IEEE ICTA), Beijing, China, Nov. 21-23, 2018
Date 2018
Publisher New York, IEEE
ISBN 978-1-5386-6551-0
Keywords
Note This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 688539
DOI https://doi.org/10.1109/CICTA.2018.8706117
Other identifier(s) View record in Web of Science
Additional link MOSQUITO H2020 project web site
Laboratories ICLAB
Record Appears in Scientific production and competences > EPFL Partners > Neuchâtel Campus > ICLAB - Integrated Circuits Laboratory
Scientific production and competences > STI - School of Engineering > STI Archives > ICLAB - Integrated Circuits Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2019-06-18

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