A Fast, Reliable and Wide-voltage-range In-memory Computing Architecture
In-Memory Computing (IMC) solutions, and particularly bitline computing in SRAM, appear promising as they mitigate one of the most energy consuming aspects in computation: data movement. In this work we propose a fast (2.4Ghz for bitwise operations and 2.4/1.5Ghz for 32/64bit additions respectively), reliable (no read disturb issues) and wide voltage range (from 0.6 to 1V) 6T SRAM-based IMC architecture using local bitlines and a fast carry adder pitched below the memory subarray. We verify the proposed architecture through layout and variability aware simulations in 28nm bulk high performances technology PDK.
postprint.pdf
Postprint
http://purl.org/coar/version/c_ab4af688f83e57aa
openaccess
3.91 MB
Adobe PDF
537bef4fdd8f453d18adefb65a7cd2ad
final.pdf
openaccess
3.9 MB
Adobe PDF
869aa36737a48dfd9b430b1f544ffc7c