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conference paper
Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses
2018
Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process.
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Name
icta2018_v4_mobi_degra.pdf
Type
Preprint
Access type
openaccess
Size
398.94 KB
Format
Adobe PDF
Checksum (MD5)
8ec9904b49f9ce196953aa14a2d1077c