Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces

Sputter deposited Al(1-x)ScxN thin films with a Sc content from x = 0 to 43 at% are investigated by electron microscopy in order to study and explain the formation and growth of abnormally oriented grains (AOG). It is found that the latter did not nucleate at the interface with the substrate, but at high energy grain boundaries, at which systematically higher Sc concentrations are detected. The AOGs are thus formed during the growth of c-textured grains. They grow faster than those, and finally protrude from the c-textured film surface, having at their end a pyramidal shape with three facets of a hexagonal wurtzite crystal: one (0001) and two (112 over bar 0) facets. Process conditions favoring less compact grain boundaries, and lower surface diffusion across grain boundaries are thought to promote nucleation of AOGs. Finally, a 4-step growth mechanism explaining the nucleation from a Sc-rich complexion and proliferation of AOGs with increasing film thickness is proposed.


Published in:
Physica Status Solidi A-Applications And Materials Science, 216, 2, 1800569
Year:
Jan 01 2019
Publisher:
Weinheim, WILEY-V C H VERLAG GMBH
ISSN:
1862-6300
1862-6319
Keywords:
Laboratories:




 Record created 2019-02-13, last modified 2019-06-19


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