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  4. Enabling proximity mask-aligner lithography with a 193nm CW light source
 
conference paper

Enabling proximity mask-aligner lithography with a 193nm CW light source

Owa, Soichi
•
Kye, Jongwook
•
Scholz, Matthias
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March 20, 2018
Optical Microlithography XXXI
Conference on Optical Microlithography XXXI

We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-amplification configuraton is frequency-quadrupled using lithiumtriborate and potassium-fluoro-beryllo-borate non-linear crystals. The large coherence-length of this monomodal laser is controlled by static and rotating shaped random diffusers. Beam shaping with imaging and non-imaging homogenizers realized with diffractive and refractive micro-optical elements is compared in simulation and measurement. We demonstrate resolution patterns offering resolutions <2 µm printed with proximity gaps of 20 µm.

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Enabling proximity mask-aligner lithography with a 193nm CW light source.pdf

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