Enabling proximity mask-aligner lithography with a 193nm CW light source

We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-amplification configuraton is frequency-quadrupled using lithiumtriborate and potassium-fluoro-beryllo-borate non-linear crystals. The large coherence-length of this monomodal laser is controlled by static and rotating shaped random diffusers. Beam shaping with imaging and non-imaging homogenizers realized with diffractive and refractive micro-optical elements is compared in simulation and measurement. We demonstrate resolution patterns offering resolutions <2 µm printed with proximity gaps of 20 µm.


Publié dans:
PROCEEDINGS OF SPIE, 10587, 50
Année
Mar 20 2018
Mots-clefs:
Autres identifiants:
Laboratoires:




 Notice créée le 2019-02-04, modifiée le 2019-03-16

Fichiers:
Télécharger le document
PDF

Évaluer ce document:

Rate this document:
1
2
3
 
(Pas encore évalué)