Enabling proximity mask-aligner lithography with a 193nm CW light source

We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-amplification configuraton is frequency-quadrupled using lithiumtriborate and potassium-fluoro-beryllo-borate non-linear crystals. The large coherence-length of this monomodal laser is controlled by static and rotating shaped random diffusers. Beam shaping with imaging and non-imaging homogenizers realized with diffractive and refractive micro-optical elements is compared in simulation and measurement. We demonstrate resolution patterns offering resolutions <2 µm printed with proximity gaps of 20 µm.


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PROCEEDINGS OF SPIE, 10587, 50
Year:
Mar 20 2018
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 Record created 2019-02-04, last modified 2019-03-16

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