Improving the resolution in mask-aligner lithography

For the back-end microfabrication in integrated circuits and for the manufacturing of light emitting diodes, proximity mask-aligner lithography is still the tool of choice, due to its simplicity and low costs. However, the downscaling of functional elements requires also to enhance the resolution of mask-aligners. We report on sub-2 mu m structures using a continuous wave laser exposure source emitting at 193 nm. By using the self-imaging Talbot effect of periodic structures, we demonstrate periods below 700 nm, as required for optical metastructures. Furthermore, we present an optimization technique for optical proximity correction in mask-aligner lithography.


Published in:
2018 International Conference On Optical Mems And Nanophotonics (Omn), 36-37
Presented at:
International Conference on Optical MEMS and Nanophotonics (OMN), Lausanne, SWITZERLAND, Jul 29-Aug 02, 2018
Year:
Jan 01 2018
Publisher:
New York, IEEE
ISSN:
2160-5033
ISBN:
978-1-5090-6374-1
Keywords:
Laboratories:




 Record created 2019-01-23, last modified 2019-08-12


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